Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga₂O₃ Schottky diodes

We report on vertical β-Ga 2 O 3 power diodes with oxidized-metal Schottky contact (PtO x ) and high permittivity (high-κ) dielectric (ZrO field plate to improve reverse blocking at both surfaces edges. The PtO showed excellent forward transport near unity ideality factor similar minimum specific on-resistance as Pt. Moreover, the contacts facilitated higher breakdown voltage lower leakage current due their barrier height (SBH) by more than 0.5 eV compared that of Most importantly, reduced off-state enabled orders magnitude less dissipation Pt ones for all duty cycles ≤0.5, indicating great potential realize low-loss efficient, high-power switches. ZrO field-oxide further edge a consistent increase in voltage. Device simulation demonstrated also led peak electric occurring instead dielectric. These results indicate combined integration SBH high-κ assist termination can be promising enhance performance diodes.